Please use this identifier to cite or link to this item:
https://repo.btu.kharkov.ua/handle/123456789/12378| Title: | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| Other Titles: | Вплив високоенергетичного опромінення на електричні та дисипативні властивості монокристалів кремнію |
| Authors: | Pelikhaty, N.M. Rokhmanov, N.Ya. Onischenko, V.V. |
| Issue Date: | 2006 |
| Publisher: | Functional Materials |
| Citation: | Pelikhaty N.M., Rokhmanov N.Ya., Onischenko V.V. The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Functional Materials, 2006. Vol.13. No. 4. P. 613-617. |
| Abstract: | Behavior of internal friction (IT) δ and electrical resistance of silicon single crystals with a low dislocation density (10-100 cm) during bombardment with α-particles was studied. The effect of hardening and a change in direct heterosis to the inverse amplitude dependence of internal friction with increasing dose rate of α-irradiation was revealed. This is explained by the blocking of charged dislocations by vacancies of radiation origin and by charge separation zones formed as a result of secondary infrared radiation. |
| URI: | https://repo.btu.kharkov.ua//handle/123456789/12378 |
| Appears in Collections: | Статті |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals.pdf | 203.24 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.