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DC Field | Value | Language |
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dc.contributor.author | Pelikhaty, N.M. | - |
dc.contributor.author | Rokhmanov, N.Ya. | - |
dc.contributor.author | Onischenko, V.V. | - |
dc.date.accessioned | 2022-11-07T11:46:25Z | - |
dc.date.available | 2022-11-07T11:46:25Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Pelikhaty N.M., Rokhmanov N.Ya., Onischenko V.V. The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Functional Materials, 2006. Vol.13. No. 4. P. 613-617. | uk_UA |
dc.identifier.uri | https://repo.btu.kharkov.ua//handle/123456789/12378 | - |
dc.description.abstract | Behavior of internal friction (IT) δ and electrical resistance of silicon single crystals with a low dislocation density (10-100 cm) during bombardment with α-particles was studied. The effect of hardening and a change in direct heterosis to the inverse amplitude dependence of internal friction with increasing dose rate of α-irradiation was revealed. This is explained by the blocking of charged dislocations by vacancies of radiation origin and by charge separation zones formed as a result of secondary infrared radiation. | uk_UA |
dc.language.iso | en | uk_UA |
dc.publisher | Functional Materials | uk_UA |
dc.title | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals | uk_UA |
dc.title.alternative | Вплив високоенергетичного опромінення на електричні та дисипативні властивості монокристалів кремнію | uk_UA |
dc.type | Article | uk_UA |
Appears in Collections: | Статті |
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The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals.pdf | 203.24 kB | Adobe PDF | View/Open |
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