The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals

Pelikhaty, N.M.; Rokhmanov, N.Ya.; Onischenko, V.V.

Please use this identifier to cite or link to this item: https://repo.btu.kharkov.ua//handle/123456789/12378

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DC Field	Value	Language
dc.contributor.author	Pelikhaty, N.M.	-
dc.contributor.author	Rokhmanov, N.Ya.	-
dc.contributor.author	Onischenko, V.V.	-
dc.date.accessioned	2022-11-07T11:46:25Z	-
dc.date.available	2022-11-07T11:46:25Z	-
dc.date.issued	2006	-
dc.identifier.citation	Pelikhaty N.M., Rokhmanov N.Ya., Onischenko V.V. The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Functional Materials, 2006. Vol.13. No. 4. P. 613-617.	uk_UA
dc.identifier.uri	https://repo.btu.kharkov.ua//handle/123456789/12378	-
dc.description.abstract	Behavior of internal friction (IT) δ and electrical resistance of silicon single crystals with a low dislocation density (10-100 cm) during bombardment with α-particles was studied. The effect of hardening and a change in direct heterosis to the inverse amplitude dependence of internal friction with increasing dose rate of α-irradiation was revealed. This is explained by the blocking of charged dislocations by vacancies of radiation origin and by charge separation zones formed as a result of secondary infrared radiation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Functional Materials	uk_UA
dc.title	The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals	uk_UA
dc.title.alternative	Вплив високоенергетичного опромінення на електричні та дисипативні властивості монокристалів кремнію	uk_UA
dc.type	Article	uk_UA
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