Please use this identifier to cite or link to this item: https://repo.btu.kharkov.ua//handle/123456789/12145
Title: Radiation destruction and internal friction in silicon single crystals
Other Titles: Радиационное разрушение и внутреннее трение в монокристаллах кремния
Радіаційне руйнування та внутрішнє тертя в монокристалах кремнію
Authors: Ryzhikov, V.D.
Rokhmanov, N.Ya.
Galkin, S.N.
Gnap A.K., A.K.
Keywords: radiation defects;internal friction;vacancies
Issue Date: 2004
Publisher: Ryzhikov V.D. Radiation destruction and internal friction in silicon single crystals/ V.D. Ryzhikov, N.Ya. Rokhmanov, S.N.Galkin, A.K. Gnap// Problems of atomic science and technology (PAST). Ser. Nucleare Phesics Investigation. – 2004, No. 2(43). - P. 180-182.
Abstract: The study of radiation defects in silicon single crystals of different orientation is carried out by means of methods of internal friction (IF) and electrical resistance. At the mechanical damping measurement a strategy of low-frequency flexible oscillations (f ~ 5 Hz) was used during the process of irradiation with α-particles. The descending curves and anomalous inverted hysteresis effect of IF versus amplitude of cyclic deformation were observed. The results were explained by the processes of ionization by induced infra-red radiation and charged dislocation-point defects association interaction.
URI: https://repo.btu.kharkov.ua//handle/123456789/12145
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